Embibe Experts Solutions for Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Gujarat Board-2018

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Embibe Experts Physics Solutions for Exercise - Embibe Experts Solutions for Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Gujarat Board-2018

Attempt the free practice questions on Chapter 14: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Gujarat Board-2018 with hints and solutions to strengthen your understanding. EMBIBE CHAPTER WISE PREVIOUS YEAR PAPERS FOR PHYSICS solutions are prepared by Experienced Embibe Experts.

Questions from Embibe Experts Solutions for Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Gujarat Board-2018 with Hints & Solutions

EASY
12th Gujarat Board
IMPORTANT

For an N-P-N transistor in a common base circuit about 7% of the electron entering the base from the emitter recombines with the hole. This results in the collector current being 18.6 mA. Calculate the emitter current.

EASY
12th Gujarat Board
IMPORTANT

Vm is the maximum voltage between the ends of the secondary terminal of a transformer used in a half-wave rectifier. When the P-N junction diode is reverse biased, What will be the potential difference between the two ends of the diode?
 

EASY
12th Gujarat Board
IMPORTANT

The emitter junction of the CE transistor amplifier is ______ biased while the collector junction is _____ biased.

MEDIUM
12th Gujarat Board
IMPORTANT

If α=0.99 for a CE transistor amplifier circuit. The input resistance is equal to 1  and the load resistance is equal to100   to , the voltage gain of the circuit is 

:

MEDIUM
12th Gujarat Board
IMPORTANT

Draw the circuit diagram of the full-wave rectifier and explain the working of the circuit.
 

MEDIUM
12th Gujarat Board
IMPORTANT

In a N-P-N transistor about 1010 electrons enter the emitter in 1 μs when it is connected to a battery. About 2% electrons recombine with the holes in the base. Calculate the value of IE, IB, αdc, and βdc (e=1.6×10-19 C)