Embibe Experts Solutions for Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Exercise

Author:Embibe Experts

Embibe Experts Physics Solutions for Exercise - Embibe Experts Solutions for Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Exercise

Attempt the free practice questions on Chapter 9: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Exercise with hints and solutions to strengthen your understanding. Physics Crash Course (Based on Revised Syllabus-2023) solutions are prepared by Experienced Embibe Experts.

Questions from Embibe Experts Solutions for Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Exercise with Hints & Solutions

MEDIUM
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IMPORTANT

Why cannot we use Si and Ge in fabrication of visible LEDs ?

MEDIUM
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IMPORTANT

Three photo diodes D1, D2 and D3 are made of semiconductors having band gaps of 2.5eV, 2eV and 3eV, respectively. Which ones will be able to detect light of wavelength 600 nm ?

Given Planck constant is h=6.62×10-34 m2 kg s-1,speed of light c=3×108 ms-1

EASY
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IMPORTANT

The probability of finding electrons in the conduction band of an intrinsic semiconductor at a finite temperature

EASY
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IMPORTANT

A solar cell is p - n junction operating in _____ condition.
 

EASY
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IMPORTANT

The highest energy level which can be occupied by an electron in the valence band at 0K is called _____ level.

EASY
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IMPORTANT

 Threshold voltage is approximately 0.2 V in _____.

EASY
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IMPORTANT

The vacuum tubes are also known as _____.