Embibe Experts Solutions for Chapter: Electronic Devices Semiconductors, Exercise 3: Level 3

In the network shown,

The width of depletion region in a $p$-$n$ junction diode is $500 \mathrm{nm}$ and an intense electric field of $6\times {10}^5 \mathrm{V} {\mathrm{m}}^{-1}$. Then, potential barrier is,

The zener diode has a $V_z=30 \mathrm{V}.$ The current passing through the diode for the following ciruit is __________ $\mathrm{mA}$.

In a $CE$ amplifier, the input ac signal to be amplified is applied across

To get an output $Y=1$ from the circuit shown below the input must be

The truth table for the system of four $\mathrm{NAND}$ gate as shown in the figure is 

A signal of $0.1 \mathrm{kW}$ is transmitted in a cable. The attenuation of cable is $-5 \mathrm{dB} \mathrm{per} \mathrm{km}$ and cable length is $20 \mathrm{km}.$ the power received at receiver is ${10}^{-\mathrm{x}} \mathrm{W}.$. The value of $\mathrm{x}$ is $[$Gain in $\mathrm{dB}=10{\log }_{10}\left(\frac{{\mathrm{P}}_0}{P_{\mathrm{i}}}\right)]$

On a particular day, the maximum frequency reflected from the ionosphere is $8 \mathrm{MHz}$. On next day it was found to increase to $9 \mathrm{MHz}$. If ratio of maximum electron densities of first day to maximum electron densities of next day the ionosphere is $n$. find value of $81\times n$.