Level 1

The scientific principle involved in 'Laser' is____

In $n-$type silicon, which of the following statements is true?

A junction diode has a resistance of $25\mathrm{\Omega }$ when forward biased and $2500\mathrm{\Omega }$ when reversed biased. The current in the diode for the arrangement as shown in the figure below will be

Two ammeters $A_1$ and $A_2$ are connected as shown in the given figure. By neglecting the internal resistance of the ammeters, the reading in the meter $A_1$ is

Considering the junction diode to be ideal, find the value of current flowing through $AB$

The depletion layer thickness of a p - n junction is ${10}^{-6} \mathrm{m}.$ If the potential across it is $0.2 \mathrm{V},$ then the electric field will be

In a $p-n$ junction, an electric field of $5\times {10}^5 \mathrm{V} \mathrm{m}$ exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from $n$-side to the $p$-side, is found to be $3.2\times {10}^{-20} \mathrm{J}$. The width of the depletion region is,

Identify a false statement from the following