Embibe Experts Solutions for Chapter: Electronic Devices, Exercise 3: Level 3

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Embibe Experts Physics Solutions for Exercise - Embibe Experts Solutions for Chapter: Electronic Devices, Exercise 3: Level 3

Attempt the practice questions on Chapter 21: Electronic Devices, Exercise 3: Level 3 with hints and solutions to strengthen your understanding. Physics Crash Course NEET solutions are prepared by Experienced Embibe Experts.

Questions from Embibe Experts Solutions for Chapter: Electronic Devices, Exercise 3: Level 3 with Hints & Solutions

EASY
NEET
IMPORTANT

If a full wave rectifier circuit is operated from 100 Hz mains, the fundamental frequency in the ripple will be

EASY
NEET
IMPORTANT

Which of following gates produces output of 1?

EASY
NEET
IMPORTANT

The current gain for a transistor used in the common-emitter configuration is 98. If the load resistance be 1  and the internal resistance be 600 Ω, what is the voltage gain?

MEDIUM
NEET
IMPORTANT

Carbon, silicon and germanium have four valence electrons each. At room temperature, which one of following statements is most appropriate?

MEDIUM
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IMPORTANT

If the ratio of the concentration of electrons to that of holes in a semiconductor is 75 and the ratio of currents is 74, then what is the ratio of their drift velocity?

MEDIUM
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IMPORTANT

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the,

MEDIUM
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IMPORTANT

The truth table for the following logic circuit is,

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EASY
NEET
IMPORTANT

The density of electrons and holes in a pure germanium sample at room temperature are equal and its value is 3×1016 per m3. On doping with aluminium, it increases to 4.5×1022 per m3. Then, the electron density in doped germanium is nearly,