At absolute zero temperature intrinsic Germanium and intrinsic Silicon, are

Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

In an intrinsic semi conductor at room temperature number of electrons and holes are

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

As the temperature of the semiconductor is increased, the mobility of electrons and holes

HARD

Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

In a semiconductor, the number density of intrinsic charge carriers at $27°\mathrm{C}$ is $1.5\times {10}^{16} {\mathrm{m}}^{-3}$. If the semiconductor is doped with an impurity atom, the hole density increases to $4.5\times {10}^{22} {\mathrm{m}}^{-3}$. The electron density in the doped semiconductor is _______$\times {10}^9 {\mathrm{m}}^{-3}$.

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

The charge carriers in an electrolyte are

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Which of the following statements is incorrect?

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

With the increase of temperature, the resistivity of a semiconductor :

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

In a semiconductor, the conductivity increases with the increase in temperature due to

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

For extrinsic semiconductors; when doping level is increased;

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In a semiconductor crystal, if the current flows due to breakage of crystal bonds, then the semiconductor is called:

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

The energy gap is much more in silicon than in germanium because

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For a $p-$type semiconductor, which of the following statements is true?

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

At a certain temperature, the number density of charge carriers in a semiconductor is $n$. When an electric field is applied to it, the charge carriers drift with an average speed $v$. If the temperature of the semiconductor is raised.

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

An intrinsic semiconductor is converted into $n$-type extrinsic semiconductor by doping it with:-

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

In a semiconductor, the electrical conductivity is due to

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

A donor impurity results in

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

In a semiconductor, the concentration of minority carriers depends mainly on

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

The intrinsic carrier concentration of silicon sample at $300 \mathrm{K}$ is $1.5\times {10}^{16}/{\mathrm{m}}^3.$ What is the density of minority carrier? (after doping, the number of majority carriers is $\left.5\times {10}^{20}/{\mathrm{m}}^3\right)$

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

An intrinsic semiconductor is:

MEDIUM

Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Semiconductor Material

The conductivity of a semiconductor sample having electron concentration of $5\times {10}^{18} \mathrm{electrons} {\mathrm{m}}^{-3}$, hole concentration of $5\times {10}^{19} \mathrm{holes} {\mathrm{m}}^{-3}$, electron mobility of $2.0\mathrm{ }{\mathrm{m}}^2\mathrm{ }{\mathrm{V}}^{-1}\mathrm{ }{\mathrm{s}}^{-1}$ and hole mobility of $0.01 {\mathrm{m}}^2\mathrm{ }{\mathrm{V}}^{-1}\mathrm{ }{\mathrm{s}}^{-1}$ is

(Take charge of an electron as $1.6\times {10}^{-19} \mathrm{C}$ )