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Doping a semiconductor results in

 

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Important Questions on Semiconductor Devices

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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
Which of the following does not give p-type properties to a semiconductor when used as a doping agent?
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
The electron concentration in an undefined n-type semiconductor is the same as hole concentration in a undefined p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
In n-type silicon, which of the following statements is true?
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
In a p-type semiconductor, the concentration of holes is 2×1015 cm-3. The intrinsic carrier concentration is 2×1010 cm-3. The concentration of electrons will be
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
The density of an electron-hole pair in pure germanium is 3×1016 m-3 at room temperature. On doping with aluminium, the hole density increases to 4.5×1022 m-3. Now the electron density (in m-3 ) in doped germanium will be
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
Which of the following statement is false?
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping

Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.

Statement II: The n-type of semiconductor has a net negative charge.

In the above statements, choose the most appropriate answer from the options given below:

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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
Which of the following statements is incorrect?
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
For extrinsic semiconductors; when doping level is increased;
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
In a semiconductor, the concentration of minority carriers depends mainly on
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
When an intrinsic semiconductor such as Si is doped with a small amount of a trivalent impurity like boron
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
An intrinsic semiconductor is converted into n-type extrinsic semiconductor by doping it with:-
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
At a certain temperature, the number density of charge carriers in a semiconductor is n. When an electric field is applied to it, the charge carriers drift with an average speed v. If the temperature of the semiconductor is raised.
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an N-type semiconductor, the density of electrons is 1019 m-3 and their mobility is 1.6 m2 V-1 s-1, then the resistivity of the semiconductor (since it is an N-type semiconductor contribution of holes is ignored) is close to:
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
An intrinsic semiconductor is:
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
The intrinsic carrier concentration of silicon sample at 300 K is 1.5×1016/m3. What is the density of minority carrier? (after doping, the number of majority carriers is 5×1020/m3
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
In a semiconductor crystal, if the current flows due to breakage of crystal bonds, then the semiconductor is called:
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
A donor impurity results in
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Physics>Modern Physics>Semiconductor Devices>Basics of Doping
For a p-type semiconductor, which of the following statements is true?