HARD
Earn 100

Draw the diagram for transistor being used as a switch.

Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

EASY
For a transistor, αdc and βdc are the current ratios, then the value of  βdc-αdcαdc  βdc is
MEDIUM
In a common emitter configuration with suitable bias, it is given that RL is the load resistance and RBE is small-signal dynamic resistance (input side). Then, voltage gain, current gain and power gain are given, respectively, by: β is current gain, IB, IC and IE are respectively base, collector, and emitter currents.
EASY
In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and the output voltages will be:
EASY
An unknown transistor needs to be identified as a npn or pnp type. A multimeter, with +ve and -ve terminals, is used to measure resistance between different terminals of transistor. If terminal 2 is the base of the transistor then which of the following is correct for a pnp transistor?
EASY
Transfer characteristics [output voltage V0 vs input voltage Vi] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a switch, it is used

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EASY
In a common-emitter transistor amplifier, the audio signal voltage across the collector is 3 V. The resistance of collector is 3 . If current gain is 100 and the base resistance is 2 , the voltage and power gain of the amplifier is
MEDIUM

In the figure, given that VBB supply can vary from 0 to 5.0 V, VCC=5 V, βdc=200, RB=100 , RC=1  and VBE=1.0 V. The minimum base current and the input voltage at which the transistor will go to saturation, will be, respectively:

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MEDIUM

The transfer characteristic curve of a transistor, having input and output resistance 100 Ω and 100 kΩ respectively, is shown in the figure. The voltage and power gain, are respectively:
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HARD
In the circuit shown in the figure, the input voltage Vi is 20 V, VBE=0 and VCE=0. The values of IB, IC and β are given by

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EASY
In a common emitter transistor amplifier, β=60, R0=5000 Ω and internal resistance of a transistor is 500 Ω. The voltage amplification of the amplifier will be
MEDIUM
A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is 250RC=1  and VCC=10 V . The minimum base current for VCE to reach saturation is

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EASY
An NPN transistor operates as a common emitter amplifier, with a power gain of  60 dB . The input circuit resistance is  100 Ω and the output load resistance is  10 kΩ . The common emitter current gain β is:
MEDIUM
The current gain of a common emitter amplifier is 69. If the emitter current is 7.0 mA, collector current is :
MEDIUM
An NPN transistor is used in common emitter configuration as an amplifier with 1 kΩ load resistance. Signal voltage of 10 mV is applied across the base-emitter. This produces a 3 mA change in the collector current and 15 μA  change in the base current of the amplifier. The input resistance and voltage gain are:
EASY
In the study of transistor as an amplifier, the ratio of collector current to emitter current is 0.98 then the ratio of collector current to base current will be
EASY
A transistor is used as a common emitter amplifier with a load resistance of 2 kΩ. The input resistance is 150 Ω. Base current is changed by 20 μA which results in a change in collector current by 1.5 mA. The voltage gain of the amplifier is
EASY

Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R.

Assertion(A) : n-p-n transistor permits more current than a p-n-p transistor.

Reason(R) : Electrons have greater mobility as a charge carrier.