EASY

Earn 100

Draw the energy band diagram when intrinsic semiconductor $(Ge)$ is doped with impurity atoms of Antimony $(Sb)$ . Name the extrinsic semiconductor so obtained and majority charge carriers in it.

Important Questions on Semiconductors

MEDIUM

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

The contribution to the total current in a semiconductor, due to electrons and holes are

0.75

and

0.25

respectively. The drift velocity of electrons is

\frac{3}{2}

times that of holes at this temperature. Then the ratio between electron concentration and hole concentration is

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

In a semiconductor, the conductivity increases with the increase in temperature due to

HARD

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

In a semiconductor, the number density of intrinsic charge carriers at

27 ° C

1.5 \times 10^{16} m^{- 3}

. If the semiconductor is doped with an impurity atom, the hole density increases to

4.5 \times 10^{22} m^{- 3}

. The electron density in the doped semiconductor is _______

\times 10^{9} m^{- 3}

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

The charge carriers in an electrolyte are

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

In a semiconductor crystal, if the current flows due to breakage of crystal bonds, then the semiconductor is called:

MEDIUM

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

For a transistor the emitter current is

0.505 mA

and the base current is

5.0 μA

. The collector is

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

In an intrinsic semi conductor at room temperature number of electrons and holes are

MEDIUM

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an

N

-type semiconductor, the density of electrons is

10^{19} m^{- 3}

and their mobility is

1.6 m^{2} V^{- 1} s^{- 1}

, then the resistivity of the semiconductor (since it is an

N

-type semiconductor contribution of holes is ignored) is close to:

MEDIUM

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

The conductivity of a semiconductor sample having electron concentration of

5 \times 10^{18} electrons m^{- 3}

, hole concentration of

5 \times 10^{19} holes m^{- 3}

, electron mobility of

2 .0 m^{2} V^{- 1} s^{- 1}

and hole mobility of

0.01 m^{2} V^{- 1} s^{- 1}

is

(Take charge of an electron as

1 .6 \times 10^{- 19} C

)

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

The intrinsic carrier concentration of silicon sample at

300 K

1.5 \times 10^{16} / m^{3} .

What is the density of minority carrier? (after doping, the number of majority carriers is

5 \times 10^{20} / m^{3})

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

Identify the logic gate and write its Boolean expression.

Question Image

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

An intrinsic semiconductor is:

MEDIUM

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

Give three differences between intrinsic and extrinsic semiconductors.

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

In a semiconductor, the electrical conductivity is due to

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

The conductivity of semiconductor increases with increase in temperature because

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

An intrinsic semiconductor is converted into

n

-type extrinsic semiconductor by doping it with:-

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

For a

p -

type semiconductor, which of the following statements is true?

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

As the temperature of the semiconductor is increased, the mobility of electrons and holes

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

Which of the following statements is incorrect?

EASY

Physics>Modern Physics>Semiconductors>Intrinsic Semiconductor

At a certain temperature, the number density of charge carriers in a semiconductor is

n

. When an electric field is applied to it, the charge carriers drift with an average speed

v

. If the temperature of the semiconductor is raised.

Draw the energy band diagram when intrinsic semiconductor (Ge) is doped with impurity atoms of Antimony (Sb). Name the extrinsic semiconductor so obtained and majority charge carriers in it.

Important Questions on Semiconductors

Learn and Prepare for any exam you want !

Draw the energy band diagram when intrinsic semiconductor $(Ge)$ is doped with impurity atoms of Antimony $(Sb)$ . Name the extrinsic semiconductor so obtained and majority charge carriers in it.