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Earn 100

Draw the energy band diagram when intrinsic semiconductor (Ge) is doped with impurity atoms of Antimony (Sb). Name the extrinsic semiconductor so obtained and majority charge carriers in it.

Important Questions on Semiconductor Devices and their Applications

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The conductivity of semiconductor increases with increase in temperature because
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As the temperature of the semiconductor is increased, the mobility of electrons and holes
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In an intrinsic semi conductor at room temperature number of electrons and holes are
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An intrinsic semiconductor is converted into n-type extrinsic semiconductor by doping it with:-
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The conductivity of a semiconductor sample having electron concentration of 5×1018 electrons m-3, hole concentration of 5×1019 holes m-3, electron mobility of 2.0 m2 V-1 s-1 and hole mobility of 0.01 m2 V-1 s-1 is

(Take charge of an electron as 1.6×10-19 C )
 
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In a semiconductor, the conductivity increases with the increase in temperature due to
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In a semiconductor crystal, if the current flows due to breakage of crystal bonds, then the semiconductor is called:
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In a semiconductor, the number density of intrinsic charge carriers at 27°C is 1.5×1016 m-3. If the semiconductor is doped with an impurity atom, the hole density increases to 4.5×1022 m-3. The electron density in the doped semiconductor is _______×109 m-3.
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The density of an electron-hole pair in pure germanium is 3×1016 m-3 at room temperature. On doping with aluminium, the hole density increases to 4.5×1022 m-3. Now the electron density (in m-3 ) in doped germanium will be
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The contribution to the total current in a semiconductor, due to electrons and holes are 0.75 and 0.25 respectively. The drift velocity of electrons is 32 times that of holes at this temperature. Then the ratio between electron concentration and hole concentration is
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The electron concentration in an undefined n-type semiconductor is the same as hole concentration in a undefined p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
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An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with
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The intrinsic carrier concentration of silicon sample at 300 K is 1.5×1016/m3. What is the density of minority carrier? (after doping, the number of majority carriers is 5×1020/m3
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At a certain temperature, the number density of charge carriers in a semiconductor is n. When an electric field is applied to it, the charge carriers drift with an average speed v. If the temperature of the semiconductor is raised.