EASY
Earn 100

Draw the energy band diagram when intrinsic semiconductor (Ge) is doped with impurity atoms of Antimony (Sb). Name the extrinsic semiconductor so obtained and majority charge carriers in it.

Important Questions on Semiconductor Devices and their Applications

MEDIUM
The contribution to the total current in a semiconductor, due to electrons and holes are 0.75 and 0.25 respectively. The drift velocity of electrons is 32 times that of holes at this temperature. Then the ratio between electron concentration and hole concentration is
EASY
As the temperature of the semiconductor is increased, the mobility of electrons and holes
EASY
In an intrinsic semi conductor at room temperature number of electrons and holes are
MEDIUM
For a transistor the emitter current is 0.505 mA and the base current is 5.0 μA. The collector is
MEDIUM
The conductivity of a semiconductor sample having electron concentration of 5×1018 electrons m-3, hole concentration of 5×1019 holes m-3, electron mobility of 2.0 m2 V-1 s-1 and hole mobility of 0.01 m2 V-1 s-1 is

(Take charge of an electron as 1.6×10-19 C )
 
EASY
In a semiconductor, the conductivity increases with the increase in temperature due to
EASY

The given figure shows the various propagation modes of e.m. waves in communication.

Question Image

a Write the names of propagation modes in A, B, C.

EASY
In a semiconductor crystal, if the current flows due to breakage of crystal bonds, then the semiconductor is called:
HARD
In a semiconductor, the number density of intrinsic charge carriers at 27°C is 1.5×1016 m-3. If the semiconductor is doped with an impurity atom, the hole density increases to 4.5×1022 m-3. The electron density in the doped semiconductor is _______×109 m-3.
EASY

The given figure shows the various propagation modes of e.m. waves in communication.

Question Image

 Why transmission of TV signals via sky wave is not possible?

EASY

The temperature dependence of resistivity of a material is shown below:

Question Image

Identify the type of material.

EASY

The temperature dependence of resistivity of a material is shown below:

Question Image

b Write the relation between resistivity and average collision time for electron.

EASY
The intrinsic carrier concentration of silicon sample at 300 K is 1.5×1016/m3. What is the density of minority carrier? (after doping, the number of majority carriers is 5×1020/m3
EASY
At a certain temperature, the number density of charge carriers in a semiconductor is n. When an electric field is applied to it, the charge carriers drift with an average speed v. If the temperature of the semiconductor is raised.