In a reverse biased $p-n$ junction, when the applied bias voltage is equal to the breakdown voltage, then

Determine the current passing through the diode $D_2$ in the circuit given. Assume these are Silicon diodes.

The $V-I$ characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is:

In the following circuit, the equivalent resistance between $A$ and $B$ is

If the Ge diode in the circuit is reverse biased, the current through $2\mathrm{k\Omega }$ resistor

Identify the semiconductor devices whose characteristics are given below, in the order $\left(\mathrm{a}\right),\mathrm{ }\left(\mathrm{b}\right),\mathrm{ }\left(\mathrm{c}\right),\mathrm{ }\left(\mathrm{d}\right)$:

The non-zero potential difference across diode $D_1$ and that across diode $D_2$ are equal in the circuit shown in the figure (both the diodes are identical in characteristics)

A $5 \mathrm{V}$ battery is connected across the points $X$ and $Y$. Assume $D_1$ and $D_2$ to be normal silicon diodes. Find the current supplied by the battery if the $+ve$ terminal of the battery is connected to point $X$.

For the circuit shown in the figure. The equivalent resistance between point $A$ and $B$ for the two cases $\left(\mathrm{i}\right) V_{\mathrm{A}}>V_{\mathrm{B}}, \left(\mathrm{ii}\right) V_{\mathrm{B}}>V_{\mathrm{A}}$ respectively is _______$\mathrm{\Omega }$, and _______ $\mathrm{\Omega }$ respectively. ($D_1$ and $D_2$ are ideal diodes)

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_1$ will be