Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 18

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Which of the following energy band diagram shows the N-type semiconductor

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Important Questions on Semiconductor Devices

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 19

A $P -$ type silicon semiconductor is made by adding one atom of indium per $5 \times 10^{7}$ atoms of silicon is $25 \times 10^{28} atom m .^{- 3}$ . Point the number of acceptor atoms in $per cubic cm$ of silicon.

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 20

If

N -

type semiconductor is heated then-

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 21

GaAs

is-

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 22

What will be the conductance of pure silicon crystal at

300 K

temperature? If electron-hole pairs per

{cm}^{3}

is

1.072 \times 10^{10}

at this temperature,

μ_{n} = 1350 {cm}^{2} {(volt \sec)}^{- 1}

and

μ_{p} = 480 {cm}^{2} {(volt \sec)}^{- 1}

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 23

Forbidden energy gap of

Ge

is

0.75 eV

, maximum wavelength of incident radiation for producing electron–hole pair in germanium semiconductor is,

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 24

Mobility of electrons in

n

-type

Ge

is

5000 {cm}^{2} v^{- 1} s^{- 1}

and conductivity is

5 mho {cm}^{- 1}

. If effect of holes is negligible, then impurity concentration will be

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 25

The intrinsic carrier density in germanium crystal at

300 K

is

2.5 \times 10^{13} per {cm}^{3}

. If the electron density in an

N -

type germanium crystal at

300 K

be

0.5 \times 10^{17} per {cm}^{3}

, the hole density (per

{cm}^{3}

) in this

N -

type crystal at

300 K

would be expected around-

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 26

Pure

Si

at

300 K

has equal electron

(n_{e})

and hole

(n_{h})

concentrations of

1.5 \times 10^{16} m^{- 3}

. Doping by indium increases

n_{h}

to

4.5 \times 10^{22} m^{- 3}

. Calculate

n_{e}

in the doped

Si

.