Intrinsic Semiconductor

Draw the energy band diagram when intrinsic semiconductor $\left(\mathrm{Ge}\right)$ is doped with impurity atoms of Antimony $\left(\mathrm{Sb}\right)$. Name the extrinsic semiconductor so obtained and majority charge carriers in it.

In a pure semiconductor, electric current is due to_________.

In a p–type semiconductor, the concentration of holes is$2 \times {10}^{15} {\mathrm{cm}}^{-3}$  The intrinsic carrier concentration is$2 \times {10}^{10} {\mathrm{cm}}^{-3}$ . The concentration of electrons will be.

Assertion : An n-type semiconductor has a large number of electrons but still it is electrically neutral.

 Reason : An n-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity. 

How current is conducted in intrinsic semiconductor?

In an intrinsic semiconductor, the number of free electrons equals the number of holes.

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at finite temperature is which of the following?

The mobility of free electrons is greater than that of free holes because

Define electron motion in a semiconductor.

What is the symbol of NOT gate?

The truth table of a logic gate is given as

What is the gate?

Explain the electric current due to electrons in an intrinsic semiconductor.

At absolute zero temperature, intrinsic Germanium and intrinsic Silicon are

Calculate the electric current generated in an intrinsic germanium plate at room temperature whose area is $2\times {10}^{-4} {\mathrm{m}}^2$ and width is $1.2\times {10}^{-3} \mathrm{m}$ and a potential difference of $5 \mathrm{V}$ is applied across its faces. Intrinsic charge carrier density is $1.6\times {10}^6/$${\mathrm{m}}^3$ for germanium at room temperature. The mobility of electrons and holes is $0.4 {\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ and $0.2 {\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$.

At absolute zero temperature intrinsic Germanium and intrinsic Silicon, are

Distinguish between intrinsic and extrinsic semiconductors.

Explain the behaviour of an intrinsic semiconductor at absolute zero temperature and at room temperature.

Define intrinsic semiconductor and extrinsic semiconductor.
 

Calculate the electric current generated in an intrinsic germanium plate at room temperature whose area is $2\times {10}^{-4} {\mathrm{m}}^2$ and width is $1.2\times {10}^{-3} \mathrm{m}$ and a potential difference of $5 \mathrm{V}$ is applied across its faces. Intrinsic charge carrier density is $1.6\times {10}^6/$${\mathrm{m}}^3$ for germanium at room temperature. The mobility of electrons and holes is $0.4 {\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ and $0.2 {\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$.

A semiconductor has equal electron and hole concentration of $2\times {10}^8{m}^{-3}$ . On doping with a certain impurity, the electron concentration increases to $4\times {10}^{10}{m}^{-3}$ , then the new hole concentration of the semiconductor is